LEDs with Organized InGaN Nanopylons Generating within Green, Yellow, as well as Blue Region
Article Sidebar
Keywords:
-
WLED, Luminous Flux, Color Quality, InGaN, Quantum Well
Abstract
The creation of structured settings for InGaN/GaN (I/G) nano-pylon diodes emit illumination (LED) within the green, yellow, as well as blue (GYB) spectrum regions using molecular beam epitaxy has been described. Compared with InGaN (planar) sheets of identical structure and thickness, the gadget’s working area, including one nano-pylon InGaN part for titularly identical element as well as lengthiness between 250 and 500 nm, would be unaffected by prolonged problems. Electroluminescent hue ranges indicate a minor blue change with rising power (nearly non-existent in the yellow gadget) and line wideness that are marginally wider than those of modern InGaN quantum wells. InGaN was also utilized in a phosphor-transmuted white LED (WLED) to enhance its optical attributes such as scattering, lumen, and color rendition. It was found that InGaN has its own advantages and limitations. It was found that adjusting the InGaN discharge to 460 nm would benefit the lumen and color rendition of the WLED under a particle size of 9 µm, while a 450-nm discharge would promote scattering, both of which better match the human sight.
References
Aktas, M., S. Grzanka, Ł. Marona, J. Goss, G. Staszczak, A. Kafar, and P. Perlin (2024). Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation. Materials, 17(18); 4502
Albert, S., A. Bengoechea-Encabo, M. Sanchez-Garcia, E. Calleja, and U. Jahn (2013). Selective Area Growth and Characterization of InGaNNanocolumns for Phosphor-Free White Light Emission. Journal of Applied Physics, 113(11); 114306
An, Y., K. Ren, L. Yin, and J. Zhang (2023). Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination. Electronics, 12(5); 1087
Anh, N. D.Q., S. D. Ho, P. T. M. Man, T. K. Duy, and N. T. P. Loan (2025a). Obtaining Higher LED Lighting Chromaticity and Luminosity with SiO2 Particles at Different Diameters. Journal of Advanced Engineering and Computation, 9(1); 21
Anh, N. D. Q., N. T. P. Loan, P. V. De, and H. Y. Lee (2025b). KBr Scattering Simulation for Improving Phosphor-ConvertingWhite LED Performance. Optoelectronics and Advanced Materials - Rapid Communications, 19(7–8); 378–383
Baheti, P. D., R. A. Talewar, and S. Moharil (2023). Blue LED (InGaN)-Driven Yellow and Red Emitting Phosphor forWhite Light Generation. Materials Letters, 348; 134727
Barettin, D., A. V. Sakharov, A. F. Tsatsulnikov, A. E. Nikolaev, A. Pecchia, M. A. D. Maur, and N. Cherkashin (2023). Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs. Nanomaterials, 13(8); 1367
Bercha, A., M. Chlipała, M. Hajdel, G. Muzioł, M. Siekacz, H. Turski, and W. Trzeciakowski (2025). Photoluminescence and Photocurrent from InGaN/GaN Diodes with QuantumWells of DifferentWidths and Polarities. Nanomaterials, 15(2); 112
Cakmakci, O., Y. Qin, P. Bosel, and G. Wetzstein (2021). Holographic Pancake Optics for Thin and Lightweight Optical See-Through Augmented Reality. Optics Express, 29(22); 35206
Chen, X. and X. Huang (2024). Full-Visible-Spectrum White LEDs Enabled by a Blue-Light-Excitable Cyan Phosphor. ACS Applied Materials & Interfaces, 16(42); 57365–57376
Cong, P. H. and N. D. Q. Anh (2025). Augmenting Chroma Performance for WLED Employing Sr8ZnSc(PO4) 7:Eu2+@SiO2 as a Scattering-Enhancing Substance. Science & Technology Indonesia, 10(2); 467–472
Cong, P. H., N. T. P. Loan, N. D. Q. Anh, and H. Lee (2025). Influence of Potassium Bromide Phosphor on Optical Properties ofWhite Light-Emitting Diodes. International Journal of Advances in Applied Sciences, 14(4); 1359
Du, A., Q. Du, X. Liu, Y. Yang, C. Xia, J. Zou, and J. Li (2021). Ce: YAG Transparent Ceramics Enabling High Luminous Efficacy for High-Power LEDs/LDs. Journal of Inorganic Materials, 8(36); 884–892
Duan, Y., N. Zhao, C. Chen, H. Lin, S. Lin, Y. Li, and H. Chen (2025). Photo-Thermal Crosstalk in AlGaInP and InGaN LEDs under Dual-Wavelength Excitation. Available at SSRN 5954466
Enya, Y., Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, et al. (2009). 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates. Applied Physics Express, 2(8); 082101
Fujita, S., Y. Umayahara, and S. Tanabe (2010). Influence of Light Scattering on Luminous Efficacy in Ce:YAG Glass-Ceramic Phosphor. Journal of the Ceramic Society of Japan, 118(1374); 128–131
Grzanka, E., S. Bauer, A. Lachowski, S. Grzanka, R. Czernecki, B. So, and M. Leszczyński (2025). In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells. Nanomaterials, 15(2); 140
Gu, Y., Y. Gong, P. Zhang, H. Hua, S. Jin, W. Yang, J. Zhu, and S. Lu (2023). Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy. Nanomaterials, 13(8); 1346
Hadi, D. S., H. Wafda, A. P. A. Mustari, V. Trisnawan, N.Widiawati, F. Miftasani, and D. H. Prajitno (2025). Corrosion Behavior of Modified F/M Steel with Ti and Dispersed Oxides: Y2O3 and ZrO2 Under High Temperature in Static Liquid Lead. Science & Technology Indonesia, 10(3); 877–888
Han, Q., W. Cai, J. Wang, Y. Furusawa, H. Wang, X. Li, H. Cheong, Y. Honda, and H. Amano (2026). Red-Emitting ???? LEDs Based on Graded-Indium InGaN Nanoplatelets. Japanese Journal of Applied Physics, 65(2); 026501
Hou, Y., X. Su, W. Chen, andW. Zhao (2021). Calibration Method ofMulti-Projector Display System with Extra-Large FOVand Quantitative Registration Accuracy Analysis. Optics Express, 29(22); 36704
Hsieh, T., W. Huang, K. Hong, T. Lee, Y. Bai, Y. Pai, and H. Kuo (2023). Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple QuantumWells. Crystals, 13(4); 572
Huang, J., Y. Ni, Y. Ma, Y. Li, Z. Sun, X. Zhu, and H. Chen (2021). Composite Structure Cr:YAG/Ce:YAG and (Ce,Cr):YAG/Ce:YAG Transparent Ceramics with High Color Rendering Index for White LEDs/LDs. Ceramics International, 47(8); 11415–11422
Huang, W., X. Miao, and Z. Liu (2023). Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs. Micromachines, 14(3); 566
Jafar, N., J. Jiang, H. Lu, M. Qasim, and H. Zhang (2023). Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency. Crystals, 13(12); 1623
Jargus, J., J. Vitasek, J. Nedoma, V. Vasinek, and R. Martinek (2019). Effect of Selected Luminescent Layers on CCT, CRI, and Response Times. Materials, 12(13); 2095
Kishino, K., K. Nagashima, and K. Yamano (2013). Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors. Applied Physics Express, 6(1); 012101
Kong, X., S. Albert, A. Bengoechea-Encabo, M. A. Sanchez-Garcia, E. Calleja, and A. Trampert (2012). Plasmon Excitation in Electron Energy-Loss Spectroscopy for Determination of Indium Concentration in (In,Ga)N/GaN Nanowires. Nanotechnology, 23(48); 485701
Le, P. X., N. D. Q. Anh, and H. Y. Lee (2024). Regulating the White LED Properties with Different SiO2 Particle Sizes. Optoelectronics and Advanced Materials – Rapid Communications, 18(9–10); 485–489
Le, P. X., N. T. P. Loan, and N. D. Q. Anh (2026). Optical Assessment of Titanium Oxide Employed in Phosphor-Transmuted WLED Devices. Science & Technology Indonesia, 11(1); 345–355
Le, P. X., N. T. P. Loan, N. D. Q. Anh, and H. Lee (2025). Thermally Stable Sol-Gel Y3Al5O12:Ce3+ Phosphors for White Light-Emitting Diodes. International Journal of Advances in Applied Sciences, 14(4); 1367–1374
Lee, T., C. Huang,W. Miao, F. Hsiao, C. Tsai, Y. Hung, and H. Kuo (2024). Innovative Stacked Yellow and Blue Mini-LED Chip for White Lamp Applications. Micromachines, 15(6); 796
Loan, N. T. P., N. D. Q. Anh, N. C. Trang, and H. Lee (2022). Better Color Distribution Uniformity and Higher Luminous Intensity for LED by Using a Three-Layered Remote Phosphor Structure. Materials Science-Poland, 40(1); 60–67
Ma, H. and N. D. Q. Anh (2024). Review the Influence of Aluminum-ZnO Films on Multi-Chip Remote-Phosphor White LEDs’ Properties. Journal of Advanced Engineering and Computation, 8(4); 225
Markovskyi, A., V. Gorbenko, T. Zorenko, S. Witkiewicz-Lukaszek, O. Sidletskiy, A. Fedorov, and Y. Zorenko (2023). Development of Three-Layered Composite Color Converters for White LEDs Based on the Epitaxial Structures of YAG:Ce, TbAG:Ce and LuAG:Ce Garnets. Materials, 16(5); 1848
Miao,W., Y. Hong, F. Hsiao, J. Chen, H. Chiang, C. Lin, and H. Kuo (2023). Modified Distributed Bragg Reflectors for Color Stability in InGaN Red Micro-LEDs. Nanomaterials, 13(4); 661
Nguyen, Q., B. Glorieux, G. Sebe, T. Yang, Y. Yu, and C. Sun (2023). Passive Anti-Leakage of Blue Light for Phosphor-ConvertedWhite LEDs with Crystal Nanocellulose Materials. Scientific Reports, 13(1); 13039
Oh, S., J. Lee, and J. Lim (2025). A Control Method for Optimizing the Spectral Ratio Characteristics of LED Lighting to Provide Color Rendering Performance Comparable to Natural Light. Sensors, 25(24); 7453
Pintus, V., F. Szabó, R. Gazdag-Kéri, D. N. Tóth, R. Nagy, P. Csuti, and M. Schreiner (2021). The Effect of New LED Lighting Systems on the Colour of Modern Paints. Scientific Reports, 11(1); 22375
Qin, H., S. Zhang, Q. Fan, X. Ni, L. Tao, and X. Gu (2025). Dielectric Passivation Treatment of InGaN Mesa on Si Substrates for Red Micro-LED Application. Crystals, 15(3); 267
Qiu, L., H. Ye, G. Xiong,W. Zhang, Y. Huang, Q. Liang, and Z. Feng (2025). Sm3+-Activated KLa(WO4) 2 Phosphors with Gd3+ Co-Doping: Orange-Red Emission and Thermal Stability toward Potential Plant Lighting Applications. Journal of Solid State Chemistry, 355; 125784
Rianjanu, A., T. Haloho, J. L. Pasaribu, A. G. Fahmi, E. Nurfani, W. S. Sipahutar, H. T. Yudistira, and T. Taher (2025). Electrospun Rare-Earth Metal Oxide (CeO2) Nanofiber for the Degradation of Congo Red Aqueous Dyes. Science & Technology Indonesia, 10(1); 123–130
Schweitzer, S., C. Sommer, P. Hartmann, P. Fulmek, J. Nicolics, P. Pachler, H. Hoschopf, F. Schrank, G. Langer, and F. P.Wenzl (2014). A Comprehensive Discussion on Colour Conversion Element Design of Phosphor Converted LEDs. Journal of Solid State Lighting, 1(1); 18
Sousa, M. A., T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, and T. Monteiro (2015). Luminescence Studies on Green Emitting InGaN/GaN MQWs Implanted with Nitrogen. Scientific Reports, 5(1); 9703
Sun, H., Y. Chen, Y. Ben, H. Zhang, Y. Zhao, Z. Jin, and M. Zhou (2023). Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN QuantumWells. Materials, 16(4); 1558
Tavazzi, S., F. Cozza, G. Nigrotti, C. Braga, N. Vlasak, S. Larcher, and F. Zeri (2020). Improvement orWorsening of Human Contrast Sensitivity due to Blue Light Attenuation at 450 nm. Clinical Optometry, 12; 57–66
Thong, N. D. M., D. N. H. Son, S. D. Ho, N. D. Q. Anh, and H. Lee (2022). The Use of Y3Al5O12:Ce3+ and CaTiO3:Pr3+ in a Dual-Layer Remote Phosphor Configuration Improves the Optical Efficiencies of a Phosphor-in-GlassWhite Light-Emitting Diode. Journal of Advanced Engineering and Computation, 6(1); 36
Tourbot, G., C. Bougerol, A. Grenier, M. D. Hertog, D. Sam-Giao, D. Cooper, and B. Daudin (2011). Structural and Optical Properties of InGaN/GaN Nanowire Heterostructures Grown by PA-MBE. Nanotechnology, 22(7); 075601
Trang, L. T. and N. D. Q. Anh (2025). Influences from SiO2 Particles on Optical Properties of White Diodes Verified Through Computer Simulation. Indonesian Journal of Electrical Engineering and Computer Science, 38(3); 1572–1579
Trang, T. T., N. H. K. Nhan, M. Tran, and P. T. Tin (2019). Yellow-Emitting YAG:Ce Phosphor: Influence of Particle Size on Optical Efficiency of High Color Temperature Conformal Packaging WLEDs. Digest Journal of Nanomaterials and Biostructures, 14(1); 167–173
Tung, H. T., M. H. N. Thi, and N. D. Q. Anh (2024). Improved Color Uniformity inWhite Light-Emitting Diodes Using LiLu(MoO4) 2:Sm3+ Combined SiO2 Composite. International Journal of Technology, 15(1); 8
Van Dung, N. and N. D. Q. Anh (2025). Ba3GdNa(PO4) 3F:Eu2+ Phosphor with Blue-Red Emission Colors on White-LED Properties. Indonesian Journal of Electrical Engineering and Computer Science, 38(3); 1564–1571
Wang, F., H. Pan,W. Mao, and D.Wang (2024). Optimizations of Luminescent Materials for White Light Emitting Diodes toward Healthy Lighting. Heliyon, 10(14); e34795
Wang, J., L. Wang, W. Zhao, Z. Hao, and Y. Luo (2010). Understanding Efficiency Droop Effect in InGaN/GaN Multiple-Quantum-Well Blue Light-Emitting Diodes with Different Degree of Carrier Localization. Applied Physics Letters, 97(20); 201112
Wang, M., S.Wang, R. Chen, M. Zhu, Y. Liu, H. Ding, and H. Li (2023). Highly Efficient and Stable CsPbBr3-Alginic Acid Composites forWhite Light-Emitting Diodes. Coatings, 13(6); 1062
Wang, Y.,W. Kuang, M. Shang, and Z. Huang (2021). Two-Color Super-Resolution Localization Microscopy via Joint Encoding of Emitter Location and Color. Optics Express, 29(21); 34797
Xiong, Q., H. Liu, Z. Chen, Y. Tai, J. Shi, andW. Liu (2021). Detection of Binocular Chromatic Fusion Limit for Opposite Colors. Optics Express, 29(22); 35022
Xu, F., X. Meng, Y. Xue, Z. Xie, G. Yu, and B. Zhang (2025). Wafer-Scale Hybrid Integration of Micro-LED Arrays with Ultra-Small Pixels on Si Platform. Journal of Luminescence, 292; 121717
Yan, J., Y. Xiang, L. Zhong, C. Jiang, and M. Wu (2025). Broadband Near-Infrared Phosphor Na2Mg5Si12O30:Cr3+ for Versatile Applications. Journal of Alloys and Compounds, 1050; 185677
Yang, H., Y. Li, J. Wang, A. Li, K. Li, C. Xu, and F. Yun (2023). Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution. Nanomaterials, 13(13); 2014
Zhao, M., H. Liao, M. S. Molokeev, Y. Zhou, Q. Zhang, Q. Liu, and Z. Xia (2019). Emerging Ultra-Narrow-Band Cyan-Emitting Phosphor forWhite LEDs with Enhanced Color Rendition. Light: Science & Applications, 8(1); 38
Zhao, X., K. Sun, S. Cui, B. Tang, H. Hu, and S. Zhou (2023). Recent Progress in Long-Wavelength InGaN Light-Emitting Diodes from the Perspective of Epitaxial Structure. Advanced photonics research, 4(9); 2300061
Zheng, X., G. Zhao, Y. Dai, Y. Fu, M. Zhou, T. Huang, and W. Guo (2025). V-Pit-Induced Electric Field Redistribution Enabling Efficient Hole Injection in InGaN-Based Red Light-Emitting Diodes Grown on Silicon. PhotoniX, 6(1); 55
Zhou, X., J. Zhou, L. Xiao, Z. Tang, C. Cai, T. Zhong, and R. Zhang (2025). Zero-Dimensional Organic-Inorganic Metal Chloride (C9H13N2) 2MnCl4 with Highly Efficient Yellow Emission forWhite Light-Emitting Diode and Flexible X-Ray Imaging. Journal of Luminescence, 291; 121718
Albert, S., A. Bengoechea-Encabo, M. Sanchez-Garcia, E. Calleja, and U. Jahn (2013). Selective Area Growth and Characterization of InGaNNanocolumns for Phosphor-Free White Light Emission. Journal of Applied Physics, 113(11); 114306
An, Y., K. Ren, L. Yin, and J. Zhang (2023). Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination. Electronics, 12(5); 1087
Anh, N. D.Q., S. D. Ho, P. T. M. Man, T. K. Duy, and N. T. P. Loan (2025a). Obtaining Higher LED Lighting Chromaticity and Luminosity with SiO2 Particles at Different Diameters. Journal of Advanced Engineering and Computation, 9(1); 21
Anh, N. D. Q., N. T. P. Loan, P. V. De, and H. Y. Lee (2025b). KBr Scattering Simulation for Improving Phosphor-ConvertingWhite LED Performance. Optoelectronics and Advanced Materials - Rapid Communications, 19(7–8); 378–383
Baheti, P. D., R. A. Talewar, and S. Moharil (2023). Blue LED (InGaN)-Driven Yellow and Red Emitting Phosphor forWhite Light Generation. Materials Letters, 348; 134727
Barettin, D., A. V. Sakharov, A. F. Tsatsulnikov, A. E. Nikolaev, A. Pecchia, M. A. D. Maur, and N. Cherkashin (2023). Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs. Nanomaterials, 13(8); 1367
Bercha, A., M. Chlipała, M. Hajdel, G. Muzioł, M. Siekacz, H. Turski, and W. Trzeciakowski (2025). Photoluminescence and Photocurrent from InGaN/GaN Diodes with QuantumWells of DifferentWidths and Polarities. Nanomaterials, 15(2); 112
Cakmakci, O., Y. Qin, P. Bosel, and G. Wetzstein (2021). Holographic Pancake Optics for Thin and Lightweight Optical See-Through Augmented Reality. Optics Express, 29(22); 35206
Chen, X. and X. Huang (2024). Full-Visible-Spectrum White LEDs Enabled by a Blue-Light-Excitable Cyan Phosphor. ACS Applied Materials & Interfaces, 16(42); 57365–57376
Cong, P. H. and N. D. Q. Anh (2025). Augmenting Chroma Performance for WLED Employing Sr8ZnSc(PO4) 7:Eu2+@SiO2 as a Scattering-Enhancing Substance. Science & Technology Indonesia, 10(2); 467–472
Cong, P. H., N. T. P. Loan, N. D. Q. Anh, and H. Lee (2025). Influence of Potassium Bromide Phosphor on Optical Properties ofWhite Light-Emitting Diodes. International Journal of Advances in Applied Sciences, 14(4); 1359
Du, A., Q. Du, X. Liu, Y. Yang, C. Xia, J. Zou, and J. Li (2021). Ce: YAG Transparent Ceramics Enabling High Luminous Efficacy for High-Power LEDs/LDs. Journal of Inorganic Materials, 8(36); 884–892
Duan, Y., N. Zhao, C. Chen, H. Lin, S. Lin, Y. Li, and H. Chen (2025). Photo-Thermal Crosstalk in AlGaInP and InGaN LEDs under Dual-Wavelength Excitation. Available at SSRN 5954466
Enya, Y., Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, et al. (2009). 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates. Applied Physics Express, 2(8); 082101
Fujita, S., Y. Umayahara, and S. Tanabe (2010). Influence of Light Scattering on Luminous Efficacy in Ce:YAG Glass-Ceramic Phosphor. Journal of the Ceramic Society of Japan, 118(1374); 128–131
Grzanka, E., S. Bauer, A. Lachowski, S. Grzanka, R. Czernecki, B. So, and M. Leszczyński (2025). In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells. Nanomaterials, 15(2); 140
Gu, Y., Y. Gong, P. Zhang, H. Hua, S. Jin, W. Yang, J. Zhu, and S. Lu (2023). Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy. Nanomaterials, 13(8); 1346
Hadi, D. S., H. Wafda, A. P. A. Mustari, V. Trisnawan, N.Widiawati, F. Miftasani, and D. H. Prajitno (2025). Corrosion Behavior of Modified F/M Steel with Ti and Dispersed Oxides: Y2O3 and ZrO2 Under High Temperature in Static Liquid Lead. Science & Technology Indonesia, 10(3); 877–888
Han, Q., W. Cai, J. Wang, Y. Furusawa, H. Wang, X. Li, H. Cheong, Y. Honda, and H. Amano (2026). Red-Emitting ???? LEDs Based on Graded-Indium InGaN Nanoplatelets. Japanese Journal of Applied Physics, 65(2); 026501
Hou, Y., X. Su, W. Chen, andW. Zhao (2021). Calibration Method ofMulti-Projector Display System with Extra-Large FOVand Quantitative Registration Accuracy Analysis. Optics Express, 29(22); 36704
Hsieh, T., W. Huang, K. Hong, T. Lee, Y. Bai, Y. Pai, and H. Kuo (2023). Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple QuantumWells. Crystals, 13(4); 572
Huang, J., Y. Ni, Y. Ma, Y. Li, Z. Sun, X. Zhu, and H. Chen (2021). Composite Structure Cr:YAG/Ce:YAG and (Ce,Cr):YAG/Ce:YAG Transparent Ceramics with High Color Rendering Index for White LEDs/LDs. Ceramics International, 47(8); 11415–11422
Huang, W., X. Miao, and Z. Liu (2023). Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs. Micromachines, 14(3); 566
Jafar, N., J. Jiang, H. Lu, M. Qasim, and H. Zhang (2023). Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency. Crystals, 13(12); 1623
Jargus, J., J. Vitasek, J. Nedoma, V. Vasinek, and R. Martinek (2019). Effect of Selected Luminescent Layers on CCT, CRI, and Response Times. Materials, 12(13); 2095
Kishino, K., K. Nagashima, and K. Yamano (2013). Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors. Applied Physics Express, 6(1); 012101
Kong, X., S. Albert, A. Bengoechea-Encabo, M. A. Sanchez-Garcia, E. Calleja, and A. Trampert (2012). Plasmon Excitation in Electron Energy-Loss Spectroscopy for Determination of Indium Concentration in (In,Ga)N/GaN Nanowires. Nanotechnology, 23(48); 485701
Le, P. X., N. D. Q. Anh, and H. Y. Lee (2024). Regulating the White LED Properties with Different SiO2 Particle Sizes. Optoelectronics and Advanced Materials – Rapid Communications, 18(9–10); 485–489
Le, P. X., N. T. P. Loan, and N. D. Q. Anh (2026). Optical Assessment of Titanium Oxide Employed in Phosphor-Transmuted WLED Devices. Science & Technology Indonesia, 11(1); 345–355
Le, P. X., N. T. P. Loan, N. D. Q. Anh, and H. Lee (2025). Thermally Stable Sol-Gel Y3Al5O12:Ce3+ Phosphors for White Light-Emitting Diodes. International Journal of Advances in Applied Sciences, 14(4); 1367–1374
Lee, T., C. Huang,W. Miao, F. Hsiao, C. Tsai, Y. Hung, and H. Kuo (2024). Innovative Stacked Yellow and Blue Mini-LED Chip for White Lamp Applications. Micromachines, 15(6); 796
Loan, N. T. P., N. D. Q. Anh, N. C. Trang, and H. Lee (2022). Better Color Distribution Uniformity and Higher Luminous Intensity for LED by Using a Three-Layered Remote Phosphor Structure. Materials Science-Poland, 40(1); 60–67
Ma, H. and N. D. Q. Anh (2024). Review the Influence of Aluminum-ZnO Films on Multi-Chip Remote-Phosphor White LEDs’ Properties. Journal of Advanced Engineering and Computation, 8(4); 225
Markovskyi, A., V. Gorbenko, T. Zorenko, S. Witkiewicz-Lukaszek, O. Sidletskiy, A. Fedorov, and Y. Zorenko (2023). Development of Three-Layered Composite Color Converters for White LEDs Based on the Epitaxial Structures of YAG:Ce, TbAG:Ce and LuAG:Ce Garnets. Materials, 16(5); 1848
Miao,W., Y. Hong, F. Hsiao, J. Chen, H. Chiang, C. Lin, and H. Kuo (2023). Modified Distributed Bragg Reflectors for Color Stability in InGaN Red Micro-LEDs. Nanomaterials, 13(4); 661
Nguyen, Q., B. Glorieux, G. Sebe, T. Yang, Y. Yu, and C. Sun (2023). Passive Anti-Leakage of Blue Light for Phosphor-ConvertedWhite LEDs with Crystal Nanocellulose Materials. Scientific Reports, 13(1); 13039
Oh, S., J. Lee, and J. Lim (2025). A Control Method for Optimizing the Spectral Ratio Characteristics of LED Lighting to Provide Color Rendering Performance Comparable to Natural Light. Sensors, 25(24); 7453
Pintus, V., F. Szabó, R. Gazdag-Kéri, D. N. Tóth, R. Nagy, P. Csuti, and M. Schreiner (2021). The Effect of New LED Lighting Systems on the Colour of Modern Paints. Scientific Reports, 11(1); 22375
Qin, H., S. Zhang, Q. Fan, X. Ni, L. Tao, and X. Gu (2025). Dielectric Passivation Treatment of InGaN Mesa on Si Substrates for Red Micro-LED Application. Crystals, 15(3); 267
Qiu, L., H. Ye, G. Xiong,W. Zhang, Y. Huang, Q. Liang, and Z. Feng (2025). Sm3+-Activated KLa(WO4) 2 Phosphors with Gd3+ Co-Doping: Orange-Red Emission and Thermal Stability toward Potential Plant Lighting Applications. Journal of Solid State Chemistry, 355; 125784
Rianjanu, A., T. Haloho, J. L. Pasaribu, A. G. Fahmi, E. Nurfani, W. S. Sipahutar, H. T. Yudistira, and T. Taher (2025). Electrospun Rare-Earth Metal Oxide (CeO2) Nanofiber for the Degradation of Congo Red Aqueous Dyes. Science & Technology Indonesia, 10(1); 123–130
Schweitzer, S., C. Sommer, P. Hartmann, P. Fulmek, J. Nicolics, P. Pachler, H. Hoschopf, F. Schrank, G. Langer, and F. P.Wenzl (2014). A Comprehensive Discussion on Colour Conversion Element Design of Phosphor Converted LEDs. Journal of Solid State Lighting, 1(1); 18
Sousa, M. A., T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, and T. Monteiro (2015). Luminescence Studies on Green Emitting InGaN/GaN MQWs Implanted with Nitrogen. Scientific Reports, 5(1); 9703
Sun, H., Y. Chen, Y. Ben, H. Zhang, Y. Zhao, Z. Jin, and M. Zhou (2023). Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN QuantumWells. Materials, 16(4); 1558
Tavazzi, S., F. Cozza, G. Nigrotti, C. Braga, N. Vlasak, S. Larcher, and F. Zeri (2020). Improvement orWorsening of Human Contrast Sensitivity due to Blue Light Attenuation at 450 nm. Clinical Optometry, 12; 57–66
Thong, N. D. M., D. N. H. Son, S. D. Ho, N. D. Q. Anh, and H. Lee (2022). The Use of Y3Al5O12:Ce3+ and CaTiO3:Pr3+ in a Dual-Layer Remote Phosphor Configuration Improves the Optical Efficiencies of a Phosphor-in-GlassWhite Light-Emitting Diode. Journal of Advanced Engineering and Computation, 6(1); 36
Tourbot, G., C. Bougerol, A. Grenier, M. D. Hertog, D. Sam-Giao, D. Cooper, and B. Daudin (2011). Structural and Optical Properties of InGaN/GaN Nanowire Heterostructures Grown by PA-MBE. Nanotechnology, 22(7); 075601
Trang, L. T. and N. D. Q. Anh (2025). Influences from SiO2 Particles on Optical Properties of White Diodes Verified Through Computer Simulation. Indonesian Journal of Electrical Engineering and Computer Science, 38(3); 1572–1579
Trang, T. T., N. H. K. Nhan, M. Tran, and P. T. Tin (2019). Yellow-Emitting YAG:Ce Phosphor: Influence of Particle Size on Optical Efficiency of High Color Temperature Conformal Packaging WLEDs. Digest Journal of Nanomaterials and Biostructures, 14(1); 167–173
Tung, H. T., M. H. N. Thi, and N. D. Q. Anh (2024). Improved Color Uniformity inWhite Light-Emitting Diodes Using LiLu(MoO4) 2:Sm3+ Combined SiO2 Composite. International Journal of Technology, 15(1); 8
Van Dung, N. and N. D. Q. Anh (2025). Ba3GdNa(PO4) 3F:Eu2+ Phosphor with Blue-Red Emission Colors on White-LED Properties. Indonesian Journal of Electrical Engineering and Computer Science, 38(3); 1564–1571
Wang, F., H. Pan,W. Mao, and D.Wang (2024). Optimizations of Luminescent Materials for White Light Emitting Diodes toward Healthy Lighting. Heliyon, 10(14); e34795
Wang, J., L. Wang, W. Zhao, Z. Hao, and Y. Luo (2010). Understanding Efficiency Droop Effect in InGaN/GaN Multiple-Quantum-Well Blue Light-Emitting Diodes with Different Degree of Carrier Localization. Applied Physics Letters, 97(20); 201112
Wang, M., S.Wang, R. Chen, M. Zhu, Y. Liu, H. Ding, and H. Li (2023). Highly Efficient and Stable CsPbBr3-Alginic Acid Composites forWhite Light-Emitting Diodes. Coatings, 13(6); 1062
Wang, Y.,W. Kuang, M. Shang, and Z. Huang (2021). Two-Color Super-Resolution Localization Microscopy via Joint Encoding of Emitter Location and Color. Optics Express, 29(21); 34797
Xiong, Q., H. Liu, Z. Chen, Y. Tai, J. Shi, andW. Liu (2021). Detection of Binocular Chromatic Fusion Limit for Opposite Colors. Optics Express, 29(22); 35022
Xu, F., X. Meng, Y. Xue, Z. Xie, G. Yu, and B. Zhang (2025). Wafer-Scale Hybrid Integration of Micro-LED Arrays with Ultra-Small Pixels on Si Platform. Journal of Luminescence, 292; 121717
Yan, J., Y. Xiang, L. Zhong, C. Jiang, and M. Wu (2025). Broadband Near-Infrared Phosphor Na2Mg5Si12O30:Cr3+ for Versatile Applications. Journal of Alloys and Compounds, 1050; 185677
Yang, H., Y. Li, J. Wang, A. Li, K. Li, C. Xu, and F. Yun (2023). Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution. Nanomaterials, 13(13); 2014
Zhao, M., H. Liao, M. S. Molokeev, Y. Zhou, Q. Zhang, Q. Liu, and Z. Xia (2019). Emerging Ultra-Narrow-Band Cyan-Emitting Phosphor forWhite LEDs with Enhanced Color Rendition. Light: Science & Applications, 8(1); 38
Zhao, X., K. Sun, S. Cui, B. Tang, H. Hu, and S. Zhou (2023). Recent Progress in Long-Wavelength InGaN Light-Emitting Diodes from the Perspective of Epitaxial Structure. Advanced photonics research, 4(9); 2300061
Zheng, X., G. Zhao, Y. Dai, Y. Fu, M. Zhou, T. Huang, and W. Guo (2025). V-Pit-Induced Electric Field Redistribution Enabling Efficient Hole Injection in InGaN-Based Red Light-Emitting Diodes Grown on Silicon. PhotoniX, 6(1); 55
Zhou, X., J. Zhou, L. Xiao, Z. Tang, C. Cai, T. Zhong, and R. Zhang (2025). Zero-Dimensional Organic-Inorganic Metal Chloride (C9H13N2) 2MnCl4 with Highly Efficient Yellow Emission forWhite Light-Emitting Diode and Flexible X-Ray Imaging. Journal of Luminescence, 291; 121718
Authors
Le, P. X., & Khiem, N. H. . (2026). LEDs with Organized InGaN Nanopylons Generating within Green, Yellow, as well as Blue Region. Science and Technology Indonesia, 11(3), 827–843. https://doi.org/10.26554/sti.2026.11.3.827-843
This work is licensed under a Creative Commons Attribution 4.0 International License.